jul-26-2004 1 bby53... silicon tuning diode ? high q hyperabrupt tuning diode ? designed for low tuning voltage operation for vco's in mobile communications equipment ? high ratio at low reverse voltage bby53-02l bby53-02v bby53-02w bby53-03w BBY53-03LRH bby53 bby53-05w type package configuration l s (nh) marking bby53 bby53-02l bby53-02v bby53-02w BBY53-03LRH* bby53-03w bby53-05w sot23 tslp-2-1 sc79 scd80 tslp-3-7 sod323 sot323 common cathode single, leadless single single single, leadless single common cathode 2 0.4 0.6 0.6 0.4 1.8 1.4 s7s ll l ll l white/5 s7s * preliminary maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 6 v forward current i f 20 ma operating temperature range t op -55 ... 125 c storage temperature t stg -55 ... 150
jul-26-2004 2 bby53... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 4 v v r = 4 v, t a = 85 c i r - - - - 10 200 na ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 3 v, f = 1 mhz c t 4.8 1.85 5.3 2.4 5.8 3.1 pf capacitance ratio v r = 1 v, v r = 3 v, f = 1 mhz c t1 / c t3 1.8 2.2 2.6 - series resistance v r = 1 v, f = 1 ghz r s - 0.47 - ?
jul-26-2004 3 bby53... diode capacitance c t = ? (v r ) f = 1mhz 0 0.5 1 1.5 2 v 3 v r 0 1 2 3 4 5 6 7 8 pf 10 c t capacitance change ? c = ? ( t a ) f = 1 mhz -40 -20 0 20 40 60 c 100 t a -3.75 -3 -2.25 -1.5 -0.75 0 0.75 1.5 2.25 3 3.75 % 5.25 ? c t 1v 3v temperature coefficient of the diode capacitance tc c = ? ( v r ) f = 1 mhz 0 0.5 1 1.5 2 2.5 3 v 4 v r -4 10 -3 10 -2 10 1/c tc c
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